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IRFI530N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C Reference to 25°C, I D = 1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.11
?
V GS = 10V, I D = 6.6A ?
––– R G = 12 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
27
37
25
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 50V, I D = 9.0A ?
25 V DS = 100V, V GS = 0V
μA
250 V DS = 80V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
44 I D = 9.0A
6.2 nC V DS = 80V
21 V GS = 10V, See Fig. 6 and 13 ??
––– V DD = 50V
––– I D = 9.0A
ns
––– R D = 5.5 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
88 ––– ? = 1.0MHz, See Fig. 5 ?
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
640 ––– V GS = 0V
160 ––– V DS = 25V
pF
12 ––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
130
650
12
60
1.3
190
970
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 6.6A, V GS = 0V ?
T J = 25°C, I F = 9.0A
di/dt = 100A/μs ??
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 15V, starting T J = 25°C, L = 3.1mH
R G = 25 ? , I AS = 9.0A. (See Figure 12)
? I SD ≤ 9.0A, di/dt ≤ 520A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? t=60s, ?=60Hz
? Uses IRF530N data and test conditions
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